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IEEE Transactions on Electron Devices

IEEE T ELECTRON DEV

Print ISSN 0018-9383 Online ISSN 1557-9646
SCIE Q2 新锐3区 工程技术
影响因子 2026
3.6
↑ 0.4
5年均分
2.9
5-Year IF
H 指数
165
H-Index
年发文量
629
Articles / Year
出刊频率
Monthly
Pub. Frequency
创刊年份
1963
Founded Year
出版商
Ieee-inst Electrical Electronics Engineers Inc
Publisher
出版国家
USA
Country
投稿参考 & 用户评分
🏆 期刊声誉
★★★★★
暂无
综合口碑评分,点击星星参与
⚡ 审稿速度
★★★★★
系统
暂无
约 4.6 个月
💰 版面费用
★★★★★
暂无
暂无APC数据,欢迎分享经验
中科院分区
2026新锐分区 新体系
大类3区
工程技术Engineering
小类3区
工程:电子与电气Electrical & Electronic Engineering
中科院2025年分区 传统体系
大类3区
工程技术Engineering
小类3区
工程:电子与电气Electrical & Electronic Engineering
WoS 期刊 JCR 分区 (2026 · JIF) 综合 SCIE Q2
学科 收录集 JIF 分区 JIF 排名 JIF 百分位
应用物理学 Physics, Applied SCIE Q2 72/191
62.3%
电气与电子工程 Engineering, Electrical & Electronic SCIE Q2 142/369
61.5%
按 JCI 指标学科分区
学科 收录集 JCI 分区 JCI 排名 JCI 百分位
应用物理学 Physics, Applied SCIE Q2 51/161 JCI 0.71
68.9%
电气与电子工程 Engineering, Electrical & Electronic SCIE Q2 123/302 JCI 0.71
59.6%
Scopus 指标
CiteScore
5.3
综合引用得分
SJR
0.809 Q1
SCImago Journal Rank
SNIP
1.398
Source Normalized Impact
JCI
0.71
Journal Citation Indicator
数据来源:Scopus (CiteScore · SJR · SNIP) · Clarivate (JCI)。指标年份:2026年6月最新版。
期刊简介

IEEE Transactions on Electron Devices (IEEE T ELECTRON DEV) is a premier peer-reviewed journal published by the Institute of Electrical and Electronics Engineers (IEEE), the world’s leading professional organization for advancing technology. With an ISSN of 0018-9383 and a 2026 Impact Factor of 3.600, the journal holds a JCR Quartile ranking of Q2, reflecting its solid standing as a respected and influential publication within the field of electronic devices and applied physics. The journal’s scope encompasses the theory, modeling, design, performance, and reliability of electron and ion devices, including but not limited to semiconductor devices, integrated circuits, power devices, sensors, displays, photovoltaics, and emerging nanoscale and quantum devices. It publishes a diverse range of article types, primarily original research papers and comprehensive review articles, alongside concise briefs and special issues dedicated to cutting-edge topics. The target audience includes academic researchers, industry engineers, and graduate students specializing in solid-state electronics, microelectronics, optoelectronics, and device physics. Notable features of the journal include its rigorous single-blind peer review process, broad international readership, and optional open-access publication under the IEEE’s hybrid model, allowing authors to make their work freely accessible. As a long-established journal in the IEEE family, it serves as a critical repository for foundational and applied advances in electron device technology, maintaining a strong reputation for technical depth and relevance, particularly within the Q2 tier of its category.

历年影响因子 & 年发文量

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